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| IPI60R385CP CoolMOSTM Power Transistor Features * Lowest figure-of-merit R ON x Qg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.385 17 nC PG-TO262 CoolMOS CP is specially designed for: * Hard switching SMPS topologies Type IPI60R385CP Package PG-TO262 Ordering Code SP000103250 Marking 6R385P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 C T C=25 C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V Value 9.0 5.7 27 227 0.3 3 50 20 30 83 -55 ... 150 60 W C Ncm 2006-04-05 A V/ns V mJ Unit A IPI60R385CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 1.5 62 K/W T C=25 C Value 5.2 27 15 Values typ. max. V/ns Unit Unit A T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V GS(th) V DS=V GS, I D=0.34 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=5.2 A, T j=25 C V GS=10 V, I D=5.2 A, T j=150 C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 V Zero gate voltage drain current I DSS - - 1 A - 10 0.35 100 0.385 nA - 0.94 1.8 Rev. 2.0 page 2 2006-04-05 IPI60R385CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) 3) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 790 38 36 - pF V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=5.2 A, R G=3.3 96 10 5 40 5 ns Q gs Q gd Qg V plateau V DD=400 V, I D=5.2 A, V GS=0 to 10 V - 4 6 17 5.0 22 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=5.2 A, T j=25 C - 0.9 260 3.1 24 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD<=ID, di/dt<=400A/s, VDClink=400V, Vpeak 5) 6) Rev. 2.0 page 3 2006-04-05 IPI60R385CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 100 102 limited by on-state resistance 80 10 s 1 s 101 60 100 s P tot [W] I D [A] 1 ms DC 40 100 10 ms 20 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z thJC=f(t P) parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 25 20 V 10 V 8V 7V 20 100 0.5 6V Z thJC [K/W] 15 0.1 0.05 I D [A] 0.2 5.5 V 10 10-1 0.02 0.01 single pulse 5V 5 4.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.0 page 4 2006-04-05 IPI60R385CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 16 8V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 1.6 6V 6.5 V 7V 5V 5.5 V 7V 14 20 V 10 V 6V 12 1.2 5.5 V 20 V 10 8 R DS(on) [] 20 I D [A] 5V 0.8 6 4.5 V 4 0.4 2 0 0 5 10 15 0 0 5 10 15 20 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=5.2 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1.2 40 36 C 25 1 32 28 24 0.8 R DS(on) [] 0.6 98 % I D [A] 20 16 C 150 0.4 typ 12 8 4 0.2 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.0 page 5 2006-04-05 IPI60R385CP 9 Typ. gate charge V GS=f(Q gate); I D=5.2 A pulsed parameter: V DD 10 9 8 120 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 7 6 400 V 101 150 C 25 C 150 C, 98% V GS [V] 5 4 3 2 1 0 0 5 10 15 20 I F [A] 100 25 C, 98% 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=3.4 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 250 700 200 660 V BR(DSS) [V] 150 E AS [mJ] 620 100 580 50 0 20 60 100 140 180 540 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.0 page 6 2006-04-05 IPI60R385CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 6 104 4 102 Coss E oss [J] 2 Crss 0 10 3 Ciss C [pF] 101 10 0 0 100 200 300 400 500 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.0 page 7 2006-04-05 IPI60R385CP Definition of diode switching characteristics Rev. 2.0 page 8 2006-04-05 IPI60R385CP PG-TO262-3-1 : Outlines Dimensions in mm/inches: Rev. 2.0 page 9 2006-04-05 IPI60R385CP Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2006-04-05 |
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